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Global Next Generation Memory Market: By Technology, Phase Change RAM, Application & Geography 2012-2017

Global next generation memory market to reach value of $90.74 billion by 2017

The total market for next generation memory is expected to reach $90.74 billion by 2017 at an estimated CAGR of 7.3% from 2012 to 2017. Emerging memories are expected to replace most of the conventional memory technologies like flash memory. Among the four next generation memory technologies covered in this report, the potential market for memristor is expected to be highest for the next five years due to its advantages like simpler technology and capability of storing information without requiring electrical current on the continuous basis. MRAM memory technology is well commercialized and assures a high capacity; it also improves memory solutions for high end consumer electronics devices. Of the next generation technologies, MRAM, in 2017, will be biggest market; followed by FeRAM, PCRAM & Memristors.

Next generation memories are the emerging non-volatile memory technologies, which are expected to replace existing memories. Not all existing memories will be replaced though. Next generation memories majorly targets the non-volatile memories such as NAND and NOR. High write and read latency, scalability, high endurance etc. makes emerging memories the best replacement for traditional non-volatile memories. The major drivers for the next generation memory market are faster switching time, high endurance and power efficient. In addition to this, the huge application base of traditional memories is also one of the major drivers for this market.

APAC will remain the leading market for memory throughout the forecasted period due to the presence of developed countries like Japan, China, South Korea, and developing countries like India, Thailand, and others. The ongoing crisis in Europe (in countries like Greece, Spain, Ireland, Portugal and Italy) has adversely affected business prospects in the region. Companies are now looking for more exciting opportunities in African countries, Middle East, South Asia, and North America.

Next generation memories are the emerging non-volatile memory technologies, which are expected to replace existing memories. Not all existing memories will be replaced though. Next generation memories majorly targets the non-volatile memories such as NAND and NOR. High write and read latency, scalability, high endurance etc. makes emerging memories the best replacement for traditional non-volatile memories. Next generation memory technologies covered in this report are MRAM, PCRAM, FeRAM and memristor also called as ReRAM. Out of these memories, only MRAM and FeRAM have reasonable market share and they are quite commercialized in the market. PCRAM has very marginal market and memristor is set to enter the market by the end of 2013.

The major drivers for the next generation memory market are faster switching time, high endurance and power efficient. In addition, the huge application base of traditional memories will also become the driver for this market. Since these memories are not completely established, there are still flaws in processes which causes drawbacks like instability and low write endurance rate in some of the memories. As mentioned, these memories are the replacement for flash memories in near future. The flash market has already tapped the huge market and hence it makes the way for next generation memories.

The major issue for next generation memories is its design cost. Not all the processes are intact yet, hence it increases the cost of the process and design. However, early adoption of these memories will be the game changing strategy for memory market. Most of the next generation memories are also called as Universal memory, which performs both the function volatile and non-volatile. So the early adoption of such memories will be the crucial for the companies.

The companies currently involved in next generation memory market are Samsung (South Korea), SK Hynix (South Korea), Micron (U.S.), Elpida (Japan), Toshiba (Japan), Powerchip (Taiwan), Winbond (Taiwan), Fujitsu (Japan), Nanya (Taiwan), Rambus (U.S.), Everspin Technology (U.S.), IDT Incorporated (U.S.), HP (U.S.) etc.

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